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SCT30N120

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SCT30N120

Product Category : MOSFET

Vgs (Max) : +25V, -10V

Current - Continuous Drain (Id) @ 25°C : 40A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 105nC @ 20V

Manufacturer : STMicroelectronics

Minimum Quantity : 1

Drive Voltage (Max Rds On, Min Rds On) : 20V

Operating Temperature : -55°C ~ 200°C (TJ)

FET Feature : -

Series : -

Input Capacitance (Ciss) (Max) @ Vds : 1700pF @ 400V

Supplier Device Package : HiP247™

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 100 mOhm @ 20A, 20V

Power Dissipation (Max) : 270W (Tc)

Package / Case : TO-247-3

Technology : SiCFET (Silicon Carbide)

Vgs(th) (Max) @ Id : 2.6V @ 1mA (Typ)

Drain to Source Voltage (Vdss) : 1200V

Description : MOSFET N-CH 1200V 45A HIP247

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